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Rectifier Diodes & Schottky Diodes

What is a Rectifier Diode?
A rectifier diode main purpose is to rectify alternating currents. It's used to flow a current through a circuit in one direction, in contrast to elements such as resistors a rectifiers current has a non-linear relationship to the voltage across it. The diode will be forward bias when positive voltage is being applied and will do its best to operate as a short circuit and allow the current to flow through the diode freely. Its main task is to convert an alternating current (AC) into a direct current (DC) through the application of rectifier bridges. A rectifier diode can sometimes be used as a Schottky Rectifier.

What is a Schottky Diode?
A Schottky Diode is sometimes referred to as a Barrier Diode or a Hot Carrier Diode. The Schottky is a single type of electronic component which is a semiconductor. It has fast switching action with an accompanying low forward voltage drop, when current flows through the diode, a small voltage drop happens across the diode terminals.
A standard diode has a voltage drop between 0.6 and 1.7 volts whereas a Schottkys drop is between 0.15 and 0.45 volts. This lower voltage drop facilitates a high switching speed as well as improved system efficiency.

What are Schottky Diodes used for?
• They are used for the voltage clamping of applications, also as a preventative of transistor saturation. This is because they have a high current density,
• They can be used as rectifiers (in power supplies.
• A good element to use in applications that are sensitive and efficiency
• To prevent batteries from discharging
• Solar panels and grid connected systems

Why should I use a Schottky?
• They feature a low turn voltage between 0.15 and 0.45 volts
• A fast recovery time, resulting in a small amount of stored charge that can then be used for high speed switches.
• The low junction capacitance occupies a small space, after the results given from the wire point contact the silicon, the capacitance levels are also very small.
• Higher efficiency
• Integrated guard ring for stress protection
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(Price shown excludes VAT) 		Part Details Brand Maximum Continuous Forward Current Diode Configuration Maximum Forward Current Rectifier Type Number of Elements per Chip Peak Reverse Repetitive Voltage Maximum Reverse Voltage Mounting Type Package Type Diode Type Diode Technology Pin Count Maximum Forward Voltage Drop Length Width Height Peak Reverse Recovery Time Diameter Dimensions Peak Non-Repetitive Forward Surge Current Peak Reverse Current Power Dissipation Recovery Time Maximum Operating Temperature Minimum Operating Temperature
ON Semi 200V 8A, Dual Diode, 8-Pin DFN NRVHP820MFDWFT1G
ON Semi 200V 8A, Dual Diode, 8-Pin DFN NRVHP820MFDWFT1G
ON Semiconductor 8A - - - 2 200V - Surface Mount DFN - - 8 - 5.1mm 6.1mm 1.05mm 50ns - 5.1 x 6.1 x 1.05mm 80A 35µA - - +175 °C -55 °C
ON Semi 1200V 22.5A, Diode, 3-Pin DPAK FFSD08120A
ON Semi 1200V 22.5A, Diode, 3-Pin DPAK FFSD08120A
ON Semiconductor 22.5A Single - - 1 1200V - Surface Mount TO-252 SiC Schottky Schottky 3 - 6.73mm 6.22mm 2.39mm - - 6.73 x 6.22 x 2.39mm 530A 400µA 263W - +175 °C -55 °C
ON Semi 650V 18A, Diode, 3-Pin DPAK FFSD1065A
ON Semi 650V 18A, Diode, 3-Pin DPAK FFSD1065A
ON Semiconductor 18A Single - - 1 650V - Surface Mount TO-252 SiC Schottky Schottky 3 - 6.73mm 6.22mm 2.39mm - - 6.73 x 6.22 x 2.39mm 760A 600µA 150W - +175 °C -55 °C
ON Semi 200V 8A, Dual Diode, 8-Pin DFN NRVHP8H200MFDWFT1G
ON Semi 200V 8A, Dual Diode, 8-Pin DFN NRVHP8H200MFDWFT1G
ON Semiconductor 8A - - - 2 200V - Surface Mount DFN - - 8 - 5.1mm 6.1mm 1.05mm 50ns - 5.1 x 6.1 x 1.05mm 80A - - - +175 °C -55 °C
20V 1A, Diode, 2-Pin CASE 457
20V 1A, Diode, 2-Pin CASE 457
ON Semiconductor 1A Single - - 1 20V - Surface Mount CASE 457 - Schottky 2 - 2.18mm 2.05mm 1.15mm - - 2.18 x 2.05 x 1.15mm 50A 25mA - - +125 °C -55 °C
20V 1A, Diode, 2-Pin CASE 457
20V 1A, Diode, 2-Pin CASE 457
ON Semiconductor 1A Single - - 1 20V - Surface Mount CASE 457 - Schottky 2 - 2.18mm 2.05mm 1.15mm - - 2.18 x 2.05 x 1.15mm 50A 25mA - - +125 °C -55 °C
20V 1A, Diode, 2-Pin SOD-123FL
20V 1A, Diode, 2-Pin SOD-123FL
ON Semiconductor 1A Single - - 1 20V - Surface Mount SOD-123FL Schottky Schottky 2 - 3mm 1.95mm 1.08mm 12.4ns - 3 x 1.95 x 1.08mm 45A 15mA - - +125 °C -55 °C
20V 1A, Diode, 2-Pin SOD-123FL
20V 1A, Diode, 2-Pin SOD-123FL
ON Semiconductor 1A Single - - 1 20V - Surface Mount SOD-123FL Schottky Schottky 2 - 3mm 1.95mm 1.08mm 12.4ns - 3 x 1.95 x 1.08mm 45A 15mA - - +125 °C -55 °C
30V 200mA, Diode, 3-Pin SOT-323
30V 200mA, Diode, 3-Pin SOT-323
ON Semiconductor 200mA Single - - 1 30V - Surface Mount SOT-323 - Schottky 3 - 2.2mm 1.35mm 0.9mm 5ns - 2.2 x 1.35 x 0.9mm - 2µA 200mW - +125 °C -55 °C
30V 200mA, Diode, 3-Pin SOT-323
30V 200mA, Diode, 3-Pin SOT-323
ON Semiconductor 200mA Single - - 1 30V - Surface Mount SOT-323 - Schottky 3 - 2.2mm 1.35mm 0.9mm 5ns - 2.2 x 1.35 x 0.9mm - 2µA 200mW - +125 °C -55 °C
400V 1A, Diode, 2-Pin CASE 59
400V 1A, Diode, 2-Pin CASE 59
ON Semiconductor 1A Single - - 1 400V - Through Hole CASE 59 - - 2 1.1V - - 5.2mm - 2.7mm 2.7 (Dia.) x 5.2mm 30A 50µA - - +175 °C -65 °C
400V 1A, Diode, 2-Pin CASE 59
400V 1A, Diode, 2-Pin CASE 59
ON Semiconductor 1A Single - - 1 400V - Through Hole CASE 59 - - 2 1.1V - - 5.2mm - 2.7mm 2.7 (Dia.) x 5.2mm 30A 50µA - - +175 °C -65 °C
40V 1A, Diode, 2-Pin SOD-123FL
40V 1A, Diode, 2-Pin SOD-123FL
  • $ 0.065
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 ON Semiconductor 1A Single - - 1 40V - Surface Mount SOD-123FL - Schottky 2 - 2.9mm 1.8mm 0.88mm - - 2.9 x 1.8 x 0.88mm 30A 25mA - - +125 °C -55 °C
40V 1A, Diode, 2-Pin SOD-123FL
40V 1A, Diode, 2-Pin SOD-123FL
ON Semiconductor 1A Single - - 1 40V - Surface Mount SOD-123FL - Schottky 2 - 2.9mm 1.8mm 0.88mm - - 2.9 x 1.8 x 0.88mm 30A 25mA - - +125 °C -55 °C
45V 15 (per Device) A, 7.5 (per Diode) A, Dual Diode, 3-Pin TO-220
45V 15 (per Device) A, 7.5 (per Diode) A, Dual Diode, 3-Pin TO-220
ON Semiconductor 15 (per Device) A, 7.5 (per Diode) A 2x Common Cathode Pair - - 2 45V - Through Hole TO-220 Schottky Schottky 3 - - - - - - - 150A - - - - -
600V 1A, Diode, 2-Pin CASE 59
600V 1A, Diode, 2-Pin CASE 59
ON Semiconductor 1A Single - Fast Recovery 1 600V - Through Hole CASE 59 - - 2 - - - 5.2mm 300ns 2.7mm 2.7 (Dia.) x 5.2mm 30A 100µA - - +150 °C -65 °C
600V 1A, Diode, 2-Pin CASE 59
600V 1A, Diode, 2-Pin CASE 59
ON Semiconductor 1A Single - Fast Recovery 1 600V - Through Hole CASE 59 - - 2 - - - 5.2mm 300ns 2.7mm 2.7 (Dia.) x 5.2mm 30A 100µA - - +150 °C -65 °C
600V 1A, Diode, 2-Pin SOD-123FL
600V 1A, Diode, 2-Pin SOD-123FL
ON Semiconductor 1A Single - - 1 600V - Surface Mount SOD-123FL - - 2 - 3mm 1.95mm 1.08mm 35ns - 3 x 1.95 x 1.08mm 30A 10µA - - +150 °C -55 °C
600V 1A, Diode, 2-Pin SOD-123FL
600V 1A, Diode, 2-Pin SOD-123FL
ON Semiconductor 1A Single - - 1 600V - Surface Mount SOD-123FL - - 2 - 3mm 1.95mm 1.08mm 35ns - 3 x 1.95 x 1.08mm 30A 10µA - - +150 °C -55 °C
60V 20A, Dual Diode, 3 + Tab-Pin D2PAK
60V 20A, Dual Diode, 3 + Tab-Pin D2PAK
ON Semiconductor 20A - - - 2 60V - Surface Mount D2PAK - Schottky 3 + Tab - 10.29mm 9.65mm 4.83mm - - 10.29 x 9.65 x 4.83mm 150A 35mA - - +175 °C -65 °C
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